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  Datasheet File OCR Text:
 SHINDENGEN
Switching Power Transistor
FS Series
2SC4663
(TP5V20FS)
5A NPN
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
RATINGS
*oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction Temperature Tj 150 *Z Collector to Base Voltage V 250 V CBO Collector to Emitter Voltage V 200 V CEO Emitter to Base Voltage V 7 V Collector Current DC EBO I 5 A C Collector Current Peak I 10 CP Base Current DC I 2 A B Base Current Peak I 4 BP Total Transistor DissipationTc = 25*Z P 25 W T Dielectric Strength Vdis Terminals to case, AC 12minute kV Mounting Torque TOR (Recommended torque 0.5 Nm : 0.3Nm) *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining0.1A V (sus)I = Voltage Min 200 V CEO C Collector Cutoff Current At rated Voltage I Max 0.1 mA CBO I Max 0.1 CEO Emitter Cutoff Current I Max 0.1 EBO At rated Voltage *1 mA DC Current Gain h V = 2V, I = 2.5A 10*25 FE CE C = h Min 10 CE C 1mA FEL V = 2V, I Collector to Emitter Saturation2.5A V (sat) I = Voltage Max 1.0 V CE C Base to Emitter Saturation Voltage V (sat) I = 0.5A Max 1.5 V BE B Thermal Resistance AEjc Junction to case Max 5.0 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 13 MHz CE C I Turn on Time ton I = 2.5A Max 0.3 C Storage Time ts I = 0.5A,1A = Max 1.0 Es B1 B2 I Fall Time tf R= 60, V = 4V Max 0.1 L BB2
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SC4663
hFE - I C
VCE = 2V
100
Tc = 150C
25C
100C
50C
0C -25C
DC Current Gain hFE
10 -55C
1 0.001 0.01
0.1
1
10
Collector Current IC [A]
2SC4663
Saturation Voltage
3 1A 2.5A 5A 10A 2.5
3
IC = 0.5A
2.5
2
2
1.5 10A 5A 1A 2.5A
1.5
1
1
Collector-Emitter Voltage VCE [V]
0.5
0.5
Tc = 25C 0 0.1 1 4
0 0.01
Base Current IB [A]
Base-Emitter Voltage VBE [V]
IC = 0.5A
2SC4663
Switching Time - IC
1 ts
Switching Time tSW [s]
ton 0.1
tf
IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25C 0.01 0 1 2 3 4 5
Collector Current IC [A]
2SC4663
Switching Time - Tc
1
ts
Switching Time tSW [s]
ton
0.1 tf
IC = 2.5A IB1 = 0.5A IB2 = 1A VBB2 = 4V R L = 60 0.01 0 50 100 150
Case Temperature Tc [C]
2SC4663
10 10ms
Forward Bias SOA
1ms 200s 100s
PT limit
1
Collector Current IC [A]
IS/B limit
0.1
Tc = 25C Single Pulse 0.01 1 10 100 200
Collector-Emitter Voltage VCE [V]
2SC4663
100
Collector Current Derating
Collector Current Derating [%]
80
IS/B limit
60
40
PT limit
20
VCE = fixed 0 0 50 100 150
Case Temperature Tc [C]
2SC4663
10
Reverse Bias SOA
8
Collector Current IC [A]
6
4
2 IB1 = 0.2IC IB2 = 1A VBB2 = 5V Tc < 150C 0 0 50 100 150 200 250
Collector-Emitter Voltage VCE [V]
2SC4663
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-5 10-3
10-4
10-2
10-1
100
101
102
Time t [s]


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